SISA01DN-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22.4A (Ta), 60A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

3.7W (Ta), 52W (Tc)

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 15A, 10V

Series :

TrenchFET® Gen IV

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+16V, -20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA