SISA10DN-T1-GE3

Manufacturer
Vishay/Siliconix
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 30A 1212-8
Manufacturer :
Vishay/Siliconix
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2425pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® 1212-8
Packaging :
Digi-Reel®
Part Status :
Active
Power Dissipation (Max) :
3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs :
3.7mOhm @ 10A, 10V
Series :
TrenchFET®
Supplier Device Package :
PowerPAK® 1212-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+20V, -16V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Datasheet :
SISA10DN-T1-GE3

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