IXTM12N100
- Manufacturer
- IXYS
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- POWER MOSFET TO-3
- Manufacturer :
- IXYS
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 1000V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-204AA, TO-3
- Packaging :
- Tube
- Part Status :
- Last Time Buy
- Power Dissipation (Max) :
- 300W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.05Ohm @ 6A, 10V
- Series :
- GigaMOS™
- Supplier Device Package :
- TO-204AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- Datasheet :
- IXTM12N100
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