SPS02N60C3

Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 1.8A TO251-3
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1.8A (Tc)
Drain to Source Voltage (Vdss) :
650V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Packaging :
Tube
Part Status :
Obsolete
Power Dissipation (Max) :
25W (Tc)
Rds On (Max) @ Id, Vgs :
3Ohm @ 1.1A, 10V
Series :
CoolMOS™
Supplier Device Package :
PG-TO251-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.9V @ 80µA
Datasheet :
SPS02N60C3

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
SPS01N60C3 Infineon Technologies 5,000 MOSFET N-CH 650V 800MA TO251-3
SPS02N60C3 INFINEON 50,000 Integrated Circuit
SPS02N60C3BKMA1 Infineon Technologies 5,000 LOW POWER_LEGACY
SPS03N60C3 Infineon Technologies 5,000 MOSFET N-CH 600V 3.2A TO251-3
SPS03N60C3AKMA1 Infineon Technologies 5,000 MOSFET N-CHANNEL TO251-3
SPS03N60C3BKMA1 Infineon Technologies 5,000 MOSFET N-CH 650V 3.2A TO251-3
SPS04N60C3BKMA1 Infineon Technologies 5,000 MOSFET N-CH 650V 4.5A TO251-3