IRLW510ATM

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.6A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

3.8W (Ta), 37W (Tc)

Rds On (Max) @ Id, Vgs :

440mOhm @ 2.8A, 5V

Series :

-

Supplier Device Package :

I2PAK (TO-262)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA