IRF510L

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.6A (Tc)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Series :

-

Supplier Device Package :

TO-262-3

Technology :

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id :

4V @ 250µA