SIS108DN-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.7A (Ta), 16A (Tc)

Drain to Source Voltage (Vdss) :

80V

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 40V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

3.2W (Ta), 24W (Tc)

Rds On (Max) @ Id, Vgs :

34mOhm @ 4A, 10V

Series :

TrenchFET® Gen IV

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA