SI8800EDB-T2-E1

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 8V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-XFBGA, CSPBGA

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

80mOhm @ 1A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

4-Microfoot

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA