SQ9945BEY-T1_GE3
- Manufacturer
 - Vishay/Siliconix
 
- Product Category
 - Transistors - FETs, MOSFETs - Arrays
 
- Description
 - MOSFET 2N-CH 60V 5.4A
 
- Manufacturer :
 - Vishay/Siliconix
 
- Product Category :
 - Transistors - FETs, MOSFETs - Arrays
 
- Current - Continuous Drain (Id) @ 25°C :
 - 5.4A
 
- Drain to Source Voltage (Vdss) :
 - 60V
 
- FET Feature :
 - Logic Level Gate
 
- FET Type :
 - 2 N-Channel (Dual)
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 12nC @ 10V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - 470pF @ 25V
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 175°C (TJ)
 
- Package / Case :
 - 8-SOIC (0.154", 3.90mm Width)
 
- Packaging :
 - Tape & Reel (TR)
 
- Part Status :
 - Active
 
- Power - Max :
 - 4W
 
- Rds On (Max) @ Id, Vgs :
 - 64mOhm @ 3.4A, 10V
 
- Series :
 - TrenchFET®
 
- Supplier Device Package :
 - 8-SO
 
- Vgs(th) (Max) @ Id :
 - 2.5V @ 250µA
 
- Datasheet :
 - SQ9945BEY-T1_GE3
 
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| SQ9945AEY-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 60V 3.7A 8SOIC | 
| SQ9945BEY | SILKRON | 30,000 | Integrated Circuit | 
| SQ9945BEY-T1_GE3 | Vishay/Siliconix | 1,036 | MOSFET 2N-CH 60V 5.4A | 
| SQ9945BEY-T1_GE3 | Vishay/Siliconix | 1,036 | MOSFET 2N-CH 60V 5.4A | 
| SQ9945BEYT1GES | SIL | 30,000 | Integrated Circuit | 

                                        
                                            
                                    
                                        














