BFS481H6327XTSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - Bipolar (BJT) - RF
- Description
- RF TRANS 2 NPN 12V 8GHZ SOT363-6
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 5mA, 8V
- Frequency - Transition :
- 8GHz
- Gain :
- 20dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 175mW
- Series :
- -
- Supplier Device Package :
- P-SOT363-6
- Transistor Type :
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheet :
- BFS481H6327XTSA1
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Part | Manufacturer | Stock | Description |
---|---|---|---|
BFS481E6327 | INF | 30,000 | Integrated Circuit |
BFS481H6327XTSA1 | Infineon Technologies | 6,896 | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |
BFS481H6327XTSA1 | Infineon Technologies | 6,896 | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |
BFS483H6327XTSA1 | Infineon Technologies | 3,000 | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |
BFS483H6327XTSA1 | Infineon Technologies | 4,347 | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |
BFS483H6327XTSA1 | Infineon Technologies | 4,347 | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |