BLT80,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

250mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 150mA, 5V

Frequency - Transition :

900MHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

175°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

2W

Series :

-

Supplier Device Package :

SOT-223

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V