HN2C01FE-GR(T5L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Arrays
- Description
- TRANS 2NPN 50V 0.15A ES6
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 6V
- Frequency - Transition :
- 60MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-563, SOT-666
- Packaging :
- Digi-Reel®
- Part Status :
- Obsolete
- Power - Max :
- 100mW
- Series :
- -
- Supplier Device Package :
- ES6
- Transistor Type :
- 2 NPN (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheet :
- HN2C01FE-GR(T5L,F)
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN2C01FE-GR(T5L,F) | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 50V 0.15A ES6 |
| HN2C01FE-GR(T5L,F) | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 50V 0.15A ES6 |
| HN2C01FEYTE85LF | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 50V 0.15A ES6 |
| HN2C01FEYTE85LF | Toshiba Semiconductor and Storage | 3,930 | TRANS 2NPN 50V 0.15A ES6 |
| HN2C01FEYTE85LF | Toshiba Semiconductor and Storage | 3,930 | TRANS 2NPN 50V 0.15A ES6 |
| HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage | 3,000 | TRANS 2NPN 50V 0.15A US6 |
| HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage | 8,731 | TRANS 2NPN 50V 0.15A US6 |
| HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage | 8,731 | TRANS 2NPN 50V 0.15A US6 |
| HN2C01FU-Y(TE85L,F | Toshiba Semiconductor and Storage | 3,000 | TRANS 2NPN 50V 0.15A US6 |
| HN2C01FU-Y(TE85L,F | Toshiba Semiconductor and Storage | 5,820 | TRANS 2NPN 50V 0.15A US6 |
| HN2C01FU-Y(TE85L,F | Toshiba Semiconductor and Storage | 5,820 | TRANS 2NPN 50V 0.15A US6 |
