EC3H02BA-TL-H

Manufacturer
ON Semiconductor
Product Category
Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 10V 7GHZ 3-ECSP1006
Manufacturer :
ON Semiconductor
Product Category :
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) :
70mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 20mA, 5V
Frequency - Transition :
7GHz
Gain :
8.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1dB @ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
3-XFDFN
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Power - Max :
100mW
Series :
-
Supplier Device Package :
3-ECSP1006
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
10V
Datasheet :
EC3H02BA-TL-H

Manufacturer related products

Catalog related products

  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR

related products