BFR843EL3E6327XTSA1

Manufacturer
Infineon Technologies
Product Category
Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 2.6V TSLP-3-10
Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) :
55mA
Frequency - Transition :
-
Gain :
25.5dB
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
3-XFDFN
Packaging :
Tape & Reel (TR)
Part Status :
Active
Power - Max :
125mW
Series :
*
Supplier Device Package :
TSLP-3-10
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
2.6V
Datasheet :
BFR843EL3E6327XTSA1

Manufacturer related products

Catalog related products

  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR
  • Microsemi Corporation
    RF POWER TRANSISTOR

related products

Part Manufacturer Stock Description
BFR840L3RHESDE6327XTSA1 Infineon Technologies 5,000 RF TRANS NPN 2.6V 75GHZ TSLP-3
BFR840L3RHESDE6327XTSA1 Infineon Technologies 1,028 RF TRANS NPN 2.6V 75GHZ TSLP-3
BFR840L3RHESDE6327XTSA1 Infineon Technologies 1,028 RF TRANS NPN 2.6V 75GHZ TSLP-3
BFR843EL3E6327XTSA1 Infineon Technologies 5,000 RF TRANS NPN 2.6V TSLP-3-10
BFR843EL3E6327XTSA1 Infineon Technologies 5,000 RF TRANS NPN 2.6V TSLP-3-10