55GN01CA-TB-E

Manufacturer :

ON Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Frequency - Transition :

4.5GHz

Gain :

9.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

200mW

Series :

-

Supplier Device Package :

3-CP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V