| US1G M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G R3G |
Taiwan Semiconductor |
12,600 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G R3G |
Taiwan Semiconductor |
14,313 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G R3G |
Taiwan Semiconductor |
14,313 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 400V 1A SMA |
| US1G-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 400V 1A SMA |
| US1G-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 400V 1A SMA |
| US1G-13-F |
Diodes Incorporated |
105,000 |
DIODE GEN PURP 400V 1A SMA |
| US1G-13-F |
Diodes Incorporated |
114,298 |
DIODE GEN PURP 400V 1A SMA |
| US1G-13-F |
Diodes Incorporated |
114,298 |
DIODE GEN PURP 400V 1A SMA |
| US1G-E3/5AT |
Vishay Semiconductor/Diodes Division |
30,000 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G-E3/5AT |
Vishay Semiconductor/Diodes Division |
31,972 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G-E3/5AT |
Vishay Semiconductor/Diodes Division |
31,972 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G-E3/61T |
Vishay Semiconductor/Diodes Division |
1,800 |
DIODE GEN PURP 400V 1A DO214AC |
| US1G-E3/61T |
Vishay Semiconductor/Diodes Division |
3,696 |
DIODE GEN PURP 400V 1A DO214AC |
