SI3900DV-T1-E3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

830mW

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.4A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

6-TSOP

Vgs(th) (Max) @ Id :

1.5V @ 250µA