HGTD3N60C3S9A
- Manufacturer
- ON Semiconductor
- Product Category
- Transistors - IGBTs - Single
- Description
- IGBT 600V 6A 33W TO252AA
- Manufacturer :
- ON Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 6A
- Current - Collector Pulsed (Icm) :
- 24A
- Gate Charge :
- 10.8nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power - Max :
- 33W
- Series :
- -
- Supplier Device Package :
- TO-252AA
- Switching Energy :
- 85µJ (on), 245µJ (off)
- Td (on/off) @ 25°C :
- -
- Test Condition :
- 480V, 3A, 82Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Datasheet :
- HGTD3N60C3S9A
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