SI7102DN-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Drain to Source Voltage (Vdss) :

12V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-50°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power Dissipation (Max) :

3.8W (Ta), 52W (Tc)

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 15A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA