SI5856DC-T1-E3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.4A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

1.1W (Ta)

Rds On (Max) @ Id, Vgs :

40mOhm @ 4.4A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA