SPP03N60S5HKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 600V 3.2A TO-220AB
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 25V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 38W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 2A, 10V
- Series :
- CoolMOS™
- Supplier Device Package :
- PG-TO220-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5.5V @ 135µA
- Datasheet :
- SPP03N60S5HKSA1
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|---|---|---|---|
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| SPP02N60C3XKSA1 | Infineon Technologies | 5,000 | LOW POWER_LEGACY |
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