IRLD120
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 100V 1.3A 4-DIP
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A (Ta)
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4V, 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 4-DIP (0.300", 7.62mm)
- Packaging :
- Tube
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 1.3W (Ta)
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 780mA, 5V
- Series :
- -
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
- Datasheet :
- IRLD120
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