IRFD110

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

4-DIP (0.300", 7.62mm)

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

1.3W (Ta)

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 10V

Series :

-

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA