RCD075N19TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.5A (Tc)

Drain to Source Voltage (Vdss) :

190V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power Dissipation (Max) :

850mW (Ta), 20W (Tc)

Rds On (Max) @ Id, Vgs :

336mOhm @ 3.8A, 10V

Series :

-

Supplier Device Package :

CPT3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA