BSC105N10LSFGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11.4A (Ta), 90A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power Dissipation (Max) :

156W (Tc)

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 50A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TDSON-8-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 110µA