IPA60R125CFD7XKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- HIGH POWER_NEW
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1503pF @ 400V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Packaging :
- Tube
- Part Status :
- Active
- Power Dissipation (Max) :
- 32W (Tc)
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 7.8A, 10V
- Series :
- OptiMOS™
- Supplier Device Package :
- PG-TO220 Full Pack
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 390µA
- Datasheet :
- IPA60R125CFD7XKSA1
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