SIHB12N65E-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

156W (Tc)

Rds On (Max) @ Id, Vgs :

380mOhm @ 6A, 10V

Series :

-

Supplier Device Package :

D²PAK (TO-263)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA