DMG6602SVT-7

Manufacturer
Diodes Incorporated
Product Category
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V TSOT23-6
Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
3.4A, 2.8A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate, 4.5V Drive
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Packaging :
Tape & Reel (TR)
Part Status :
Not For New Designs
Power - Max :
840mW
Rds On (Max) @ Id, Vgs :
60mOhm @ 3.1A, 10V
Series :
-
Supplier Device Package :
TSOT-23-6
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Datasheet :
DMG6602SVT-7

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