JAN2N1613

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Packaging :

Bulk

Part Status :

Active

Power - Max :

800mW

Series :

Military, MIL-PRF-19500/181

Supplier Device Package :

TO-39 (TO-205AD)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max) :

30V