MT3S16U(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - RF
- Description
- RF TRANS NPN 5V 4GHZ USM
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 60mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 1V
- Frequency - Transition :
- 4GHz
- Gain :
- 4.5dBi
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 2.4dB @ 1GHz
- Operating Temperature :
- 125°C (TJ)
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 100mW
- Series :
- -
- Supplier Device Package :
- USM
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5V
- Datasheet :
- MT3S16U(TE85L,F)
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