RN2708JE(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Description
- TRANS 2PNP PREBIAS 0.1W ESV
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-553
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 22kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Series :
- -
- Supplier Device Package :
- ESV
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheet :
- RN2708JE(TE85L,F)
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|---|---|---|---|
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