D850N40TXPSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 4KV 850A
- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 850A
- Current - Reverse Leakage @ Vr :
- 50mA @ 4000V
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -40°C ~ 160°C
- Package / Case :
- DO-200AB, B-PUK
- Packaging :
- Bulk
- Part Status :
- Active
- Series :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- -
- Voltage - DC Reverse (Vr) (Max) :
- 4000V
- Voltage - Forward (Vf) (Max) @ If :
- 1.28V @ 850A
- Datasheet :
- D850N40TXPSA1
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|---|---|---|---|
| D850-15I | US-Lasers, Inc. | 5,000 | LASER DIODE 850NM 15MW TO18 |
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| D850N28TXPSA1 | Infineon Technologies | 5,000 | DIODE GEN PURP 2.8KV 850A |
| D850N30TXPSA1 | Infineon Technologies | 5,000 | DIODE GEN PURP 3KV 850A |
| D850N32TXPSA1 | Infineon Technologies | 5,000 | DIODE GEN PURP 3.2KV 850A |
| D850N34TXPSA1 | Infineon Technologies | 5,000 | DIODE GEN PURP 3.4KV 850A |
| D850N36TXPSA1 | Infineon Technologies | 5,000 | DIODE GEN PURP 3.6KV 850A |
