1N5806
- Manufacturer
- Semtech
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 150V 3.3A AXIAL
- Manufacturer :
- Semtech
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 25pF @ 5V, 1MHz
- Current - Average Rectified (Io) :
- 3.3A
- Current - Reverse Leakage @ Vr :
- 1µA @ 150V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- Axial
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 25ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- Axial
- Voltage - DC Reverse (Vr) (Max) :
- 150V
- Voltage - Forward (Vf) (Max) @ If :
- 875mV @ 1A
- Datasheet :
- 1N5806
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|---|---|---|---|
| 1N5802 | Microsemi Corporation | 317 | DIODE GEN PURP 50V 1A AXIAL |
| 1N5802 | Semtech | 5,000 | DIODE GEN PURP 50V 3.3A AXIAL |
| 1N5802JANTX | MSC | 50,000 | Integrated Circuit |
| 1N5802US | Microsemi Corporation | 102 | DIODE GEN PURP 50V 1A D5A |
| 1N5802US | Semtech | 5,000 | DIODE GEN PURP 50V 1.1A |
| 1N5803 | Microsemi Corporation | 5,000 | DIODE GEN PURP 75V 1A AXIAL |
| 1N5804 | Microsemi Corporation | 616 | DIODE GEN PURP 100V 1A AXIAL |
| 1N5804 | Semtech | 5,000 | DIODE GEN PURP 100V 3.3A AXIAL |
| 1N5804US | Microsemi Corporation | 22 | DIODE GEN PURP 100V 1A D5A |
| 1N5804US | Semtech | 5,000 | DIODE GEN PURP 100V 1.1A |
| 1N5805 | Microsemi Corporation | 5,000 | DIODE GEN PURP 125V 1A AXIAL |
| 1N5806/TR | Microsemi Corporation | 5,000 | UFR,FRR |
| 1N5806C.TR | Semtech | 5,000 | DIODE GEN PURP 150V 2.5A AXIAL |
| 1N5806C.TR | Semtech | 283 | DIODE GEN PURP 150V 2.5A AXIAL |
| 1N5806E3/TR | Microsemi Corporation | 5,000 | UFR,FRR |
