S1MHM2G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 1000V 1A DO214AC
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 12pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 1µA @ 1000V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 1.5µs
- Series :
- Automotive, AEC-Q101
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 1A
- Datasheet :
- S1MHM2G
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| S1MHE3/5AT | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3/61T | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE35AT | VISHAY | 30,000 | Integrated Circuit |
| S1MHE3_A/H | Vishay Semiconductor/Diodes Division | 5,400 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3_A/H | Vishay Semiconductor/Diodes Division | 7,366 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3_A/H | Vishay Semiconductor/Diodes Division | 7,366 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3_A/I | Vishay Semiconductor/Diodes Division | 15,000 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3_A/I | Vishay Semiconductor/Diodes Division | 16,292 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHE3_A/I | Vishay Semiconductor/Diodes Division | 16,292 | DIODE GEN PURP 1KV 1A DO214AC |
| S1MHM3_A/H | Vishay Semiconductor/Diodes Division | 5,000 | 1A 1000V SMA STD GPP SM RECT |
| S1MHM3_A/I | Vishay Semiconductor/Diodes Division | 5,000 | 1A 1000V SMA STD GPP SM RECT |
| S1MHR3G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 1000V 1A DO214AC |
