GBL10HD2G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Bridge Rectifiers
- Description
- BRIDGE RECT 1PHASE 1KV 4A GBL
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Bridge Rectifiers
- Current - Average Rectified (Io) :
- 4A
- Current - Reverse Leakage @ Vr :
- 5µA @ 1000V
- Diode Type :
- Single Phase
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 4-SIP, GBL
- Packaging :
- Tube
- Part Status :
- Active
- Series :
- Automotive, AEC-Q101
- Supplier Device Package :
- GBL
- Technology :
- Standard
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 4A
- Voltage - Peak Reverse (Max) :
- 1kV
- Datasheet :
- GBL10HD2G
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GBL10 | GeneSiC Semiconductor | 5,000 | BRIDGE RECT 1PHASE 1KV 4A GBL |
| GBL10 | TSC | 30,000 | Integrated Circuit |
| GBL10 D2G | Taiwan Semiconductor | 5,000 | BRIDGE RECT 1PHASE 1KV 4A GBL |
| GBL10-E3/45 | Vishay Semiconductor/Diodes Division | 1,861 | BRIDGE RECT 1PHASE 1KV 3A GBL |
| GBL10-E3/51 | Vishay Semiconductor/Diodes Division | 1,190 | BRIDGE RECT 1PHASE 1KV 3A GBL |
| GBL10-M3/45 | Vishay Semiconductor/Diodes Division | 5,000 | BRIDGE RECT 1PHASE 1KV 4A GBL |
| GBL10-M3/51 | Vishay Semiconductor/Diodes Division | 5,000 | BRIDGE RECT 1PHASE 1KV 4A GBL |
| GBL10E351 | VISHAY | 30,000 | Integrated Circuit |
