Mounting Type:
Memory Format:
Memory Interface:
Write Cycle Time - Word, Page:
Image Part Manufacturer Description Stock Action
MT47H512M4EB-187E:C Micron Technology Inc
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H256M8EB-187E:C Micron Technology Inc
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H256M4CF-25:H Micron Technology Inc
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H128M4CF-187E:G Micron Technology Inc
IC DRAM 512M PARAL...
RFQ
5,000
In-stock
Get Quote
W971GG8KB-25 TR Winbond Electronics Corporation
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
W971GG6KB-25 TR Winbond Electronics Corporation
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
W971GG6KB-18 TR Winbond Electronics Corporation
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG6JB-3 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG6JB-25 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG6JB-18 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG8JB-3 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG8JB-25 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
W972GG8JB-18 TR Winbond Electronics Corporation
IC DRAM 2G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H64M8SH-25E:H Micron Technology Inc
IC DRAM 512M PARAL...
RFQ
5,000
In-stock
Get Quote
MT47H64M16NF-25E:M Micron Technology Inc
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H32M16NF-25E:H Micron Technology Inc
IC DRAM 512M PARAL...
RFQ
5,000
In-stock
Get Quote
MT47H32M16NF-187E:H Micron Technology Inc
IC DRAM 512M PARAL...
RFQ
5,000
In-stock
Get Quote
MT47H128M8SH-25E:M Micron Technology Inc
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H128M8SH-187E:M Micron Technology Inc
IC DRAM 1G PARALL...
RFQ
5,000
In-stock
Get Quote
MT47H128M4SH-25E:H Micron Technology Inc
IC DRAM 512M PARAL...
RFQ
5,000
In-stock
Get Quote
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