1N4446
- Manufacturer
- Microsemi Corporation
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 75V 200MA DO35
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 200mA
- Current - Reverse Leakage @ Vr :
- 25nA @ 20V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -65°C ~ 150°C
- Package / Case :
- DO-204AH, DO-35, Axial
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 4ns
- Series :
- -
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- DO-35
- Voltage - DC Reverse (Vr) (Max) :
- 75V
- Voltage - Forward (Vf) (Max) @ If :
- 1V @ 20mA
- Datasheet :
- 1N4446
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| 1N4405 | dsi | 50,000 | Integrated Circuit |
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| 1N4437_FT | Microsemi Corporation | 5,000 | BRIDGE RECT 1PHASE 400V |
| 1N4444-1 | Microsemi Corporation | 5,000 | DIODE SWITCHING |
| 1N4446 | ON Semiconductor | 5,000 | DIODE GEN PURP 100V 200MA DO35 |
| 1N4446 BK | Central Semiconductor | 5,000 | DIODE GEN PURP 100V 150MA DO35 |
| 1N4446 TR | Central Semiconductor | 5,000 | DIODE GEN PURP 100V 150MA DO35 |
| 1N4446TR | ON Semiconductor | 5,000 | DIODE GEN PURP 100V 200MA DO35 |
| 1N4446_T50R | ON Semiconductor | 5,000 | DIODE GEN PURP 100V 200MA DO35 |
| 1N4447 | ON Semiconductor | 23,845 | DIODE GEN PURP 100V DO35 |
| 1N4447 | Microsemi Corporation | 5,000 | DIODE GEN PURP 75V 200MA DO35 |
| 1N4447TR | ON Semiconductor | 5,000 | DIODE GEN PURP 100V DO35 |
| 1N4448 | ON Semiconductor | 26,674 | DIODE GEN PURP 100V 200MA DO35 |
| 1N4448 | Microsemi Corporation | 5,000 | DIODE GEN PURP 75V 200MA DO35 |
